LN151F Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diodes

Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : P_O = 7.5 mW (typ.)
Fast response and high-speed modulation capability :
t_r, t_f = 1 µs (typ.)
Infrared light emission close to monochromatic light :
λ_P = 950 nm (typ.)
Narrow directivity, suitable for effective use of radiant power
(LN151L)
Wide directivity, matched for external optical systems (LN151F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
160
mW
I_F
100
mA
I_FP*
2
A
V_R
3
V
T_opr –25 to +100 ˚C
T_stg –30 to+100 ˚C
LN151F
ø4.6±0.15
Unit : mm
Glass window
2-ø0.45±0.05
2.54±0.25
21
ø5.75 max.
1: Anode
2: Cathode
LN151L
ø4.6±0.15
Unit : mm
Glass lens
2-ø0.45 ± 0.05
2.54±0.25
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Radiant power
P_O
Peak emission wavelength
λ_P
Spectral half band width
∆λ
Forward voltage (DC)
V_F
Reverse current (DC)
I_R
Capacitance between pins
C_t
Rise time
t_r
Fall time
t_f
LN151F
Half-power angle
θ
LN151L
Conditions
I_F = 100mA
I_F = 100mA
I_F = 100mA
I_F = 100mA
V_R = 3V
V_R = 0V, f = 1MHz
I_FP = 100mA
The angle in which radiant intencity is 50%
21
ø5.75 max.
1: Anode
2: Cathode
min typ max Unit
5
7.5
mW
950
nm
50
nm
1.3 1.6
V
10
µA
60
pF
1
µs
1
µs
32
deg.
8
deg.
1