DRC3114E Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

DRC3114E
DRC3114E_PT-Ta
P_T  T_a
125
100
75
50
25
0
0 40 80 120 160 200
Ambient temperature T_a (°C)
DRC3114E_VCEsat-IC
V_CE(sat)  I_C
10
I_C / I_B = 20
1
0.1
T_a = 85°C
−30°C
25°C
0.01
0.1
1
10
100
Collector current I_C (mA)
DRC3114E_IC-VCE
I_C  V_CE
120
T_a = 25°C
100
I_B = 350 µA
80
300 µA
60
250 µA
40
200 µA
150 µA
20
50 µA ^{100 µA}
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
DRC3114E_I_O-V_IN
I_O  V_IN
10
V_O = 5 V
1
T_a = 85°C
25°C
10^−1
10^−2
−30°C
10^−3₀
0.5
1.0
1.5
2.0
Input voltage V_IN (V)
DRC3114E_hFE-IC
h_FE  I_C
350
V_CE = 10 V
300
250
T_a = 85°C
25°C
200
150
−30°C
100
50
0
0.1
1
10
100
Collector current I_C (mA)
DRC3114E_VIN-IO
V_IN  I_O
100
V_O = 0.2 V
10
25°C
−30°C
1
T_a = 85°C
0.1
0.1
1
10
100
Output current I_O (mA)
Ver. DED
2