 English |
|
|
|
|
|
|
|
| DRC3114E Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type | |||
| |||
|
DRC3114E
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3114E
DRC9114E in SSSMini3 type package
ï¢ Features
ï Low collector-emitter saturation voltage VCE(sat)
ï Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
ï¢ Marking Symbol: NB
ï¢ Packaging
DRC3114E0L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
50
V
VCEO
50
V
IC
100
mA
PT
100
mW
Tj
150
°C
Tstg â55 to +150 °C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
R1
B
R2
SSSMini3-F2-B
SC-105AA
SOT-723
C
E
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Resistance value
R1
10
R2
10
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.5
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
35
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.25
Input voltage (ON)
VI(on) VCE = 0.2 V, IC = 5 mA
2.1
Input voltage (OFF)
VI(off) VCE = 5 V, IC = 100 µA
0.8
Input resistance
R1
â30% 10 +30%
Resistance ratio
R1 / R2
0.8
1.0
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
kΩ
kΩ
Unit
V
V
µA
µA
mA

V
V
V
kΩ

Publication date: December 2012
Ver. DED
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese