CNB1009 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNB1009
I_F , I_C — Ta
60
I_F
50
40
I_C
30
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
I_F — V_F
60
Ta = 25˚C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage V_F (V)
I_C — I_F
I_C — V_CE
10 ²
10 ²
V_CC = 5V
Ta = 25˚C
Ta = 25˚C
R_L = 100Ω
10
10
I_F = 30mA
1
1
20mA
10mA
10 ^–1
10 ^–1
V_F — Ta
1.6
1.2
I_F = 50mA
10mA
0.8
1mA
0.4
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
I_C — Ta
160
V_CC = 10V
I_F = 20mA
R_L = 100Ω
120
80
40
10 ^–2
10 ^–1
1
10
10 ²
Forward current I_F (mA)
10 ^–2
10 ^–1
1
10
10 ²
Collector to emitter voltage V_CE (V)
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
I_CEO — Ta
10
10 ³
V_CE = 10V
1
10 ²
10 ^–1
10
10 ^–2
1
t_r — I_C
V_CC = 10V
800
Ta = 25˚C
600
R_L = 1kΩ
500Ω
400
100Ω
200
I_C — d
V_CC = 10V
Ta = 25˚C
R_L = 100Ω
,,IF = 20mA
d
10 ^–3
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
10 ^–1
10 ^–2
10 ^–1
1
10
Collector current I_C (mA)
0
0
4
8
12
16
Distance d (mm)
2