CNB1009 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNB1009
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response : t_r, t_f = 6 µs (typ.)
Small size, light weight
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector to emitter voltage V_CEO 20
V
Output (Photo Emitter to collector voltage VECO
5
V
transistor) Collector current
I_C
30
mA
Collector power dissipation P_C*2
100
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg –30 to +100 ˚C
12.0±0.3
(4.0) 2-ø2.3
1.0
(1.0) 1.0
19.0±0.3
2-9.5±0.2
ø2.2
Unit : mm
(15.5)
2
3
1
4
(Note) ( ) Dimension is reference
,,,
1 23
4
Pin connection
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.34 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Forward voltage (DC)
Input
characteristics ^{Reverse current (DC)}
Capacitance between pins
V_F I_F = 50mA
I_R V_R = 3V
C_t V_R = 0V, f = 1MHz
1.2 1.5 V
10 µA
50
pF
Output characteristics Collector cutoff current
I_CEO V_CE = 10V
0.2 µA
Collector to emitter capacitance C_C V_CE = 10V, f= 1MHz
5
pF
Transfer ^{Collector current}
I_C*1 V_CC = 10V, I_F = 20mA, R_L = 100Ω
100 500
µA
characteristics Response time
t_r*2 , t_f*3 V_CC = 10V, I_C = 1mA, R_L = 100Ω
6
µs
Collector to emitter saturation voltage V_CE(sat) I_F = 50mA, I_C = 0.1mA
0.3 V
*1 _{Transfer characteristics measurement circuit}
(Ambient light is shut off completely)
I_F
I_C ^VCC
d = 5 mm
R_L
Standard white paper (Reflective ratio 90%)
*2 _{Time required for the collector current to increase from}
10% to 90% of its final value.
*3 _{Time required for the collector}
90%
current to decrease from 90%
10%
to 10% of its initial value.
t_r
t_f
1