CNB1001 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Reflective Photosensors

CNB1001,CNB1002
Reflective Photosensors (Photo Reflectors)
I_F , I_C — Ta
60
I_F
50
40
30
I_C
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
I_F — V_F
60
Ta = 25˚C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage V_F (V)
V_F — Ta
1.6
I_F = 50mA
1.2
10mA
1mA
0.8
0.4
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
I_C — V_CE
600
d = 1mm
Ta = 25˚C
500
I_F = 20mA
400
15mA
300
10mA
200
8mA
6mA
100
4mA
2mA
0
012345678
Collector to emitter voltage V_CE (V)
I_CEO — Ta
t_r , t_f — I_C
10
10 ³
V_CE = 10V
V_CC = 5V
Ta = 25˚C
: t_r
1
: t_f
10 ²
R_L = 2kΩ
10 ^–1
1kΩ
10
10 ^–2
100Ω
1
10 ^–3
10 ^–4
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
10^–1
10 ^–2
10 ^–1
1
10
Collector current I_C (mA)
I_C — I_F
800
V_CC = 5V
Ta = 25˚C
R_L = 100Ω
d = 1mm
600
400
200
0
0
8
16
24
Forward current I_F (mA)
I_C — Ta
160
V_CC = 2V
I_F = 4mA
R_L = 100Ω
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
I_C — d
100
80
60
,,^{VCE = 2V}
Ta = 25˚C
I_F = 4mA
d
40
20
0
0
2
4
6
8
10
Distance d (mm)
2