CNB1001 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective Photosensors

Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Overview
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infrared
light emitting diode which is integrated with a high sensitivity Si
phototransistor in a single resin package.
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 35
V
transistor) Emitter to collector voltage V_ECO
6
V
Collector power dissipation P_C*2
75
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 40 to +100 ˚C
3.4
1.8
1
3
C0.5
Unit : mm
0.15
0.05^{+–00..015}
Chip
center
2
4-0.7
4
4-0.5
0.85
1.5
,,,,,, ^CNB1001
CNB1002
1 23
4
3 41
2
Pin connection
Pin connection
1: Anode 3: Emitter
1: Emitter 3: Anode
2: Cathode 4: Collector 2: Collector 4: Cathode
(Note) Tolerance unless otherwise specified is ±0.2
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
V_F I_F = 20mA
1.2 1.4 V
characteristics Reverse current (DC)
I_R V_R = 3V
10 µA
Output characteristics Collector cutoff current
I_CEO V_CE = 20V
100 nA
Collector current
I_C*1 V_CC = 2V, I_F = 4mA. R_L = 100Ω, d = 1mm 23
160 µA
Leakage current
Transfer
I_D V_CC = 2V, I_F = 4mA, R_L = 100Ω
characteristics ^{Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA}
Response time
t_r*2 V_CC = 5V, I_C = 0.1mA,
t_f*2 R_L = 1000Ω
100 nA
0.4 V
30
µs
40
*1 _{Output Current (IC) measurement} *2 _{Response time measurement}
method (see figure below.)
circuit (see figure below.)
Color indication of classifications
Glass plate
Evaporated Al
d = 1mm
Glass plate
Evaporated Al
d = 1mm
t_r : Rise time
t_f : Fall time
Class
Q
I_C (µA)
23 to 50
Color
Orange
Sig.IN
, ^IF
R_L
I_C
Sig.IN
V_CC
50Ω
Sig.
R_L ^OUT
,, ,, _{,,, Input and output are handled electrically.}
, _{This product is not designed to withstand radiation.}
V_CC
Sig.OUT
t_r
R
90%
S
10%
t_f
41 to 90
74 to 160
White
Light blue
1