3SK241 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – GaAs N-Channel MES FET

High Frequency FETs
P_D  Ta
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_D  V_G2S
48
V_DS=5V
Ta=25˚C
40
32
V_G1S=1.0V
0.5V
24
0V
16
– 0.5V
8
– 1.0V
0
–2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4 0
Gate 2 to source voltage V_G2S (V)
PG  V_G1S
24
20
V_G2S=1.5V
16
12
1.0V
8
0.5V
4
0
–1.6 –1.2 – 0.8 – 0.4
0V
V_DS=5V
f=800MHz
Ta=25˚C
0 0.4 0.8
Gate 1 to source voltage V_G1S (V)
I_D  V_DS
36
V_G2S=0
Ta=25˚C
30
V_G1S=0V
24
– 0.3V
18
– 0.6V
12
– 0.9V
6
–1.2V
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
| Y_fs |  V_G1S
48
V_DS=5V
f=1kHz
Ta=25˚C
40
32
24
V_G2S=1.5V
16
1.0V
8
0.5V
0V
0
–3 –2 –1 0 1 2 3
Gate 1 to source voltage V_G1S (V)
NF  V_G1S
12
V_DS=5V
f=800MHz
Ta=25˚C
10
V_G2S=1.5V
8
1.0V
6
0.5V
4
0V
2
0
–1.6 –1.2 – 0.8 – 0.4 0 0.4 0.8
Gate 1 to source voltage V_G1S (V)
3SK241
I_D  V_G1S
48
V_DS=5V
Ta=25˚C
40
VG2S=1.0V
32
0.5V
24
0V
16
– 0.5V
8
–1.0V
0
–2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4 4
Gate 1 to source voltage V_G1S (V)
C_iss, C_oss  V_DS
0.6
V_G1S=V_G2S=–6V
f=1MHz
Ta=25˚C
0.5
0.4
C_iss
0.3
C_oss
0.2
0.1
0
0.1 0.3 1 3 10 30 100
Drain to source voltage V_DS (V)
PG  V_G2S
60
V_DS=5V
f=800MHz
Ta=25˚C
40
20
0
–20
–40
–60
–6 –4 –2 0 2 4 6
Gate 2 to source voltage V_G2S (V)
2