3SK241 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs N-Channel MES FET

High Frequency FETs
3SK241
GaAs N-Channel MES FET
For VHF-UHF amplification
s Features
q Low noise-figure (NF)
q Large power gain PG
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.2
1.5 –0.3
unit: mm
0.65±0.15
0.5R
4
1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
Gate 1 current
Gate 2 current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_G1S
V_G2S
I_D
I_G1
I_G2
P_D
T_ch
T_stg
13
V
−6
V
−6
V
50
mA
1
mA
1
mA
200
mW
150
°C
−55 to +150
°C
3
2
0.4±0.2
1: Source
2: Drain
3: Gate2
4: Gate1
Mini Type Package (4-pin)
Marking Symbol: DU
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 5V, V_G1S = 0, V_G2S = 0
8.5
35
mA
Gate 2 to Drain current
I_G2DO
V_G2D = −13V (G1, S = Open)
50
µA
Gate 1 cut-off current
I_G1SS
V_DS = V_G2S = 0, V_G1S = −6V
−20
µA
Gate 2 cut-off current
I_G2SS
V_DS = V_G1S = 0, V_G2S = −6V
−20
µA
Drain cut-off current
I_DSX
V_DS = 13V, V_G1S = −3.5V, V_G2S = 0
50
µA
Gate 1 to Source cut-off voltage V_G1SC V_DS = 5V, V_G2S = 0, I_D = 200µA
−3.5
V
Gate 2 to Source cut-off voltage V_G2SC V_DS = 5V, V_G1S = 0, I_D = 200µA
−3.5
V
Forward transfer admittance
| Y_fs |
V_DS = 5V, I_D = 10mA, V_G2S = 1.5V, f = 1kHz
18
23
mS
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
V_DS = 5V, V_G1S = V_G2S = −6V
f = 1MHz
0.4
2
pF
0.3
1.2
pF
0.02
0.04
pF
Power gain
PG
V_DS = 5V, I_D = 10mA
13
19
dB
Noise figure
NF
V_G2S = 1.5V, f = 800MHz
1.5
2.5
dB
Gain reduction
G_R
V_DS = 5V, V_AGC = 1.5V/−3.5V, f = 800MHz 37
45
dB
1