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2SK655 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET | |||
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Silicon MOS FETs (Small Signal)
PD  Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
ID  VDS
120
Ta=25ËC
100
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
20
3.5V
3.0V
2.5V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Ciss, Coss, Crss  VDS
12
VGS=0
f=1MHz
Ta=25ËC
10
Ciss
8
6
4
Coss
2
0
Crss
1
3
10
30
100
Drain to source voltage VDS (V)
ID  VGS
120
VDS=5V
Ta=25ËC
100
Ta=â25ËC
80
25ËC
60
75ËC
40
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VIN  IO
100
VO=5V
Ta=25ËC
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Output current IO (mA)
2SK655
| Yfs |  VGS
60
VDS=5V
Ta=25ËC
50
40
30
20
10
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on)  VGS
120
ID=20mA
100
80
60
Ta=75ËC
40
25ËC
â25ËC
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
2
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