2SK655 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK655
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q Allowing to supply with the radial taping
4.0±0.2
unit: mm
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V_DS
V_GSO
I_D
I_DP
P_D
T_ch
T_stg
50
V
8
V
100
mA
200
mA
200
mW
150
°C
−55 to +150
°C
marking
123
1.27 1.27
1: Source
2.54±0.15
2: Drain
3: Gate
EIAJ: SC-72
New S Type Package
Internal Connection
D
G
S
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS
V_DS = 10V, V_GS = 0
10
µA
Gate to Source leakage current I_GSS
V_GS = 8V, V_DS = 0
50
µA
Drain to Source breakdown voltage V_DSS
I_D = 100µA, V_GS = 0
50
V
Gate threshold voltage
V_th
I_D = 100µA, V_DS = V_GS
1.5
3.5
V
Drain to Source ON-resistance R_DS(on) I_D = 20mA, V_GS = 5V
50
Ω
Forward transfer admittance
| Y_fs |
I_D = 20mA, V_DS = 5V, f = 1kHz
20
35
mS
Input capacitance (Common Source) C_iss
10
15
pF
Output capacitance (Common Source) C_oss
V_DS = 5V, V_GS = 0, f = 1MHz
4
5
pF
Reverse transfer capacitance (Common Source) C_rss
0.5
1
pF
Turn-on time
t_on*
V_DD = 5V, V_GS = 0 to 5V, R_L = 200Ω
10
ns
Turn-off time
t_off*
V_DD = 5V, V_GS = 5 to 0V, R_L = 200Ω
20
ns
* _{ton, toff measurement circuit}
V_GS = 5V
50Ω
V_{out 200Ω}
V_in
V_DD = 5V
V_out
10%
90%
10%
90%
t_on
t_off
1