2SK1860 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

2SK1860
I_D  V_DS
0.45 _{Ta = 25°C}
0.40
VGS = 0 V
0.35
0.30
− 0.05 V
0.25
0.20
− 0.1 V
0.15
− 0.15 V
0.10
− 0.2 V
0.05
0
0 2 4 6 8 10 12
Drain-source voltage V_DS (V)
I_D  V_GS
0.50
VDS = 10 V
0.45
Ta = −25°C
0.40
0.35
0.30
0.25
25°C
0.20
0.15
0.10
0.05
85°C
0
− 0.6 − 0.5 − 0.4 − 0.3 − 0.2 − 0.1 0
Gate-source voltage V_GS (V)
Y_fs  I_D
2.0
VDS = 10 V
Ta = 25°C
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
Drain current I_D (mA)
Y_fs  V_GS
2.0 _{VDS = 10 V}
1.8 ^{Ta = 25°C}
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−2.5 −2.0 −1.5 −1.0 − 0.5 0
Gate-source voltage V_GS (V)
2
SJF00039AED