2SK1860 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
0.40
+0.10
–0.05
Unit: mm
0.12
+0.02
–0.01
■ Features
• High mutual conductance g_m
• Low noise voltage of NV
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Drain-source voltage (Gate open)
Drain-gate voltage (Souse open)
V_DSO
20
V
V_DGO
20
V
Drain-source current (Gate open)
I_DSO
2
mA
Drain-gate current (Souse open)
I_DGO
2
mA
Gate-source cutoff current (Drain open) I_GSO
2
mA
Power dissipation
Operating ambient temperature
Storage temperature
P_D
200
mW
T_opr −20 to +80 °C
T_stg −55 to +150 °C
3
1
2
(0.95) (0.95)
1.9±0.1
2.9±0.2
10˚
(0.5)
Marking Symbol: 1H
1: Drain
2: Source
3: Gate
Minit3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain current
Drain-sourse cutoff current
(G-S short)
I_D
V_DS = 4.5 V, C_O = 10 pFɼR_D = 2.2 kΩ ± 1% 100
I_DSS
V_DS = 4.5 V, V_GS = 0
95
600 µA
480 µA
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
g_m
V_D = 4.5 V, V_GS = 0ɼf = 1 kHz
700 1 600
µS
NV
V_D = 4.5 V, R_D = 2.2 kΩ ± 1%
C_O = 10 pF, A-curve
G_v1
V_D = 4.5 V, R_D = 2.2 kΩ ± 1%
C_O = 10 pF, e_G = 10 mVɼf = 1 kHz
−3 2
4 µV
dB
G_v2
V_D = 12 V, R_D = 2.2 kΩ ± 1%
C_O = 10 pF, e_G = 10 mVɼf = 1 kHz
G_v3
V_D = 1.5 V, R_D = 2.2 kΩ ± 1%
C_O = 10 pF, e_G = 10 mVɼf = 1 kHz
0 3.3
dB
−4.5 − 0.3
dB
∆G_{v ·} f^*
V_D = 4.5 V, R_D = 2.2 kΩ ± 1%
C_O = 10 pF, e_G = 10 mVɼf = 1 kHz to 70 Hz
0 1.5 dB
∆G_{v2 −} G_v1
0
3.5 dB
∆G_{v1 −} G_v3
0
3.5 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _* : ∆G_{v ·} f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Publication date: August 2003
SJF00039AED
1