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| 2SK1611 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET | |||
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Power F-MOS FETs
ID  VDS
6
5
VGS=15V 10V
7V
4
TC=25ËC
6V
3
2
5V
1
50W
4V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
ID  VGS
6
VDS=25V
TC=25V
5
4
3
2
1
0
0
2
4
6
8
10
Gate to source voltage VGS (V)
PD  Ta
60
(1) TC=Ta
(2) Without heat sink
50
(PD=2W)
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
| Yfs |  ID
3.2
VDS=25V
2.8
TC=25ËC
2.4
2.0
1.6
1.2
0.8
0.4
0
0123456
Drain current ID (A)
Ciss, Coss, Crss  VDS
10000
TC=25ËC
3000
1000
Ciss
300
100
Coss
30
Crss
10
0 40 80 120 160 200 240
Drain to source voltage VDS (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25ËC
30
10
IDP
3
ID
DC
1
t=1ms
0.3
10ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
2SK1611
RDS(on)  ID
10
TC=25ËC
8
6
4
VGS=10V
15V
2
0
0123456
Drain current ID (A)
ton, tf, td(off)  ID
160
VDD=200V
140
VGS=10V
TC=25ËC
120
100
td(off)
80
60
ton
40
tf
20
0
0123456
Drain current ID (A)
EAS  Tj
30
ID=3A
VDD=50V
25
20
15
10
5
0
25 50 75 100 125 150 175
Junction temperature Tj (ËC)
2
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