2SK1611 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity
q V_GSS: 30V guaranteed
q Low R_DS(on), high-speed switching characteristic
s Applications
q High-speed switching (switching power supply, AC adaptor)
q For high-frequency power amplification
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
800
V
Gate to Source voltage
V_GSS
±30
V
Drain current
DC
I_D
Pulse
I_DP
±3
A
±6
A
Avalanche energy capacity
EAS^*
20
mJ
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
50
W
2
Channel temperature
Storage temperature
* _{Single pulse}
T_ch
150
°C
T_stg
−55 to +150
°C
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
I_DSS
I_GSS
V_DSS
EAS^*
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on
Fall time
t_f
Turn-off time (delay time)
t_d(off)
* _{Avalanche energy capacity test circuit}
V_DS = 640V, V_GS = 0
V_GS = ±30V, V_DS = 0
I_D = 1mA, V_GS = 0
L = 4.5mH, I_D = 3A, V_DD = 50V
V_DS = 25V, I_D = 1mA
V_GS = 10V, I_D = 2A
V_DS = 25V, I_D = 2A
V_DS = 20V, V_GS = 0, f = 1MHz
V_GS = 10V, I_D = 2A
V_DD = 200V, R_L = 100Ω
PVS
L
I_D
Gate
R_GS
V_DS
Drain
Source
C V_DD
10.0±0.2
5.5±0.2
unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
min
typ
max
Unit
0.1
mA
±1
µA
800
V
20
mJ
1
5
V
3.2
4
Ω
1.5
2.4
S
730
pF
90
pF
40
pF
40
ns
35
ns
105
ns
1