2SK1478 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
I_D  V_DS
16
T_C=25˚C
14
12
10
8V
8
7V
6
4
6V
2
5V
0
0 5 10 15 20 25 30
Drain to source voltage V_DS (V)
I_D  V_GS
12
V_DS=10V
T_C=25˚C
10
8
6
4
2
0
0 2 4 6 8 10 12
Gate to source voltage V_GS (V)
P_D  Ta
50
(1) T_C=Ta
(2) Without heat sink
(P_D=2W)
40
30
(1)
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
| Y_fs |  I_D
12
V_DS=10V
T_C=25˚C
10
8
6
4
2
0
0
5
10 15 20 25
Drain current I_D (A)
C_iss, C_oss, C_rss  V_DS
10000
3000
f=1MHz
T_C=25˚C
1000
C_iss
300
100
C_oss
30
C_rss
10
3
1
0
50 100 150 200 250
Drain to source voltage V_DS (V)
Area of safe operation (ASO)
100
30
I_DP
10 ^ID
Non repetitive pulse
T_C=25˚C
t=100µs
1ms
3
DC
1
0.3
100ms
0.1
10ms
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage V_DS (V)
2SK1478
R_DS(on)  I_D
0.6
V_GS=10V
T_C=25˚C
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
Drain current I_D (A)
t_on, t_f, t_d(off)  I_D
300
V_DD=100V
V_GS=10V
250
T_C=25˚C
200
t_d(off)
150
100
t_on
t_f
50
0
0
5
10 15 20 25
Drain current I_D (A)
2