2SK1478 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK1478
Silicon N-Channel Power F-MOS FET
s Features
q Low ON-resistance R_DS(on): R_DS(on) = 0.4Ω (typ.)
q High-speed switching: t_f = 44ns (typ.)
q No secondary breakdown
q High breakdown voltage, large allowable power dissipation
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
250
V
Gate to Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
±8
A
±16
A
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
40
W
2
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on
Fall time
t_f
Turn-off time (delay time)
t_d(off)
V_DS = 200V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 25V, I_D = 1mA
V_GS = 10V, I_D = 5A
V_DS = 25V, I_D = 5A
V_DS = 10V, V_GS = 0, f = 1MHz
V_GS = 10V, I_D = 5A
V_DD = 100V, R_L = 20Ω
10.0±0.2
5.5±0.2
unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
min
typ
max
Unit
0.1
mA
±1
µA
250
V
1
5
V
0.4
0.6
Ω
2.7
4.7
S
1100
pF
200
pF
60
pF
72
ns
44
ns
136
ns
1