2SK0615 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
P_D  Ta
1.6
Copper foil of the drain portion
1.4
should have a area of 1cm²
or more and the board
thickness should be 1.7mm.
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_D  V_DS
1.2
Ta=25˚C
V_GS=5.5V
1.0
0.8
5V
0.6
4.5V
0.4
4V
3.5V
0.2
3V
0
0
2
4
6
8
10
Drain to source voltage V_DS (V)
| Y_fs |  V_GS
600
V_DS=15V
f=1kHz
Ta=25˚C
500
400
300
200
100
0
0123456
Gate to source voltage V_GS (V)
C_iss, C_oss, C_rss  V_DS
120
V_GS=0
f=1MHz
Ta=25˚C
100
80
60
40
C_iss
20
C_oss
0
C_rss
1 3 10 30 100 300 1000
Drain to source voltage V_DS (V)
R_DS(on)  Ta
6
I_D=500mA
5
4
V_GS=5V
3
10V
2
1
0
–50 –25 0
25 50 75
Ambient temperature Ta (˚C)
2SK0615
I_D  V_GS
1.2
V_DS=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
Gate to source voltage V_GS (V)
R_DS(on)  V_GS
6
I_D=500mA
5
4
3
Ta=75˚C
2
25˚C
–25˚C
1
0
0
4
8
12 16 20
Gate to source voltage V_GS (V)
2