2SK0615 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
V_DS
80
V
Gate to Source voltage
V_GSO
20
V
Drain current
I_D
±0.5
A
Max drain current
I_DP
±1
A
Allowable power dissipation
P_D*
1
W
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
* _{PC board: Copper foil of the drain portion should have a area of 1cm}2 _or
more and the board thickness should be 1.7mm.
(0.85)
0.55±0.1
1
2
3
(2.5) (2.5)
0.45±0.05
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
Drain to Source ON-resistance
V_th
R_DS(on)*1
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on*1, ²
Turn-off time
t_off*1, ²
*1 _{Pulse measurement}
*2 _{ton, toff measurement circuit}
V_in = 10V
t = 1µS
f = 1MHZ
50Ω
V_out
V_in
68Ω
V_DD = 30V
V_out
V_DS = 60V, V_GS = 0
V_GS = 20V, V_DS = 0
I_DS = 100µA, V_GS = 0
I_D = 1mA, V_DS = V_GS
I_D = 0.5A, V_GS = 10V
I_D = 0.2A, V_DS = 15V, f = 1kHz
V_DS = 10V, V_GS = 0, f = 1MHz
10% ^Vin
90% _Vout
t_on
10%
90%
t_off
min
typ
max
Unit
10
µA
0.1
µA
80
V
1.5
3.5
V
2
4
Ω
300
mS
45
pF
30
pF
8
pF
15
ns
20
ns
Note) The part number in the parenthesis shows conventional part number.
1