2SK0301 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
P_D  Ta
320
280
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_D  V_DS
5
Ta=25˚C
4
3
V_GS=0
– 0.2V
2
– 0.4V
– 0.6V
1
– 0.8V
–1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Drain to source voltage V_DS (V)
I_D  V_GS
16
V_DS=10V
14
12
10
8
Ta=–25˚C
25˚C
6
4
75˚C
2
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Gate to source voltage V_GS (V)
g_m  V_GS
12
V_DS=10V
Ta=25˚C
10
8
6
4
2
0
–2.0 –1.6 –1.2 – 0.8 – 0.4 0
Gate to source voltage V_GS (V)
C_iss  V_DS
16
V_GS=0
Ta=25˚C
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
C_oss  V_DS
8
V_GS=0
Ta=25˚C
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
2SK0301
I_D  V_DS
10
Ta=25˚C
8
V_GS=0V
6
– 0.2V
– 0.4V
4
– 0.6V
2
– 0.8V
– 1.0V
– 1.2V
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
g_m  I_D
12
V_DS=10V
Ta=25˚C
10
8
I_DSS=7.5mA
6
4
2
0
0
2
4
6
8
10
Drain current I_D (mA)
C_rss  V_DS
8
V_GS=0
Ta=25˚C
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
248