2SK0301 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noies, high gain
G High gate to drain voltage V_GDO
5.0±0.2
unit: mm
4.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
V_DSX
V_GDO
V_GSO
I_D
I_G
P_D
T_j
T_stg
55
V
−55
V
−55
V
±30
mA
10
mA
250
mW
125
°C
−55 to +125
°C
+0.2
0.45 –0.1
+0.2
0.45 –0.1
1.27
1.27
123
2.54±0.15
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS*
V_DS = 10V, V_GS = 0
1
20
mA
Gate to Source leakage current I_GSS
V_GS = −30V, V_DS = 0
−10
nA
Gate to Drain voltage
V_GDC
I_G = −100µA, V_DS = 0
−55
−80
V
Gate to Source cut-off voltage V_GSC
V_DS = 10V, I_D = 10µA
−5
V
Mutual conductance
g_m
V_DS = 10V, V_GS = 0, f = 1kHz
2.5
7.5
mS
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
V_DS = 10V, V_GS = 0, f = 1MHz
6.5
pF
1.9
pF
Noise figure
NF
V_DS = 10V, V_GS = 0, R_g = 100kΩ
0.5
dB
f = 100Hz
* _{IDSS rank classification}
Runk
P
I_DSS (mA)
1 to 3
Q
2 to 6.5
R
5 to 12
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
247