2SK0065 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – For Impedance Conversion In Low Frequency

Silicon Junction FETs (Small Signal)
P_D  Ta
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_D  V_DS
800
Ta=25˚C
700
600
V_GS=0V
500
400
– 0.1V
300
– 0.2V
200
– 0.3V
– 0.4V
100
– 0.5V
– 0.6V
0
– 0.7V
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
g_m  V_GS
1.2
V_DS=4.5V
f=1kHz
Ta=25˚C
1.0
I_DSS=0.9mA
0.8
0.6
0.3mA
0.4
0.1mA
0.2
0
–1.0 – 0.8 – 0.6 – 0.4 – 0.2 0
Gate to source voltage V_GS (V)
g_m  I_D
1.2
V_DS=4.5V
f=1kHz
Ta=25˚C
1.0
I_DSS=0.9mA
0.3mA
0.8
0.1mA
0.6
0.4
0.2
0
0
0.2 0.4 0.6 0.8 1.0
Drain current I_D (mA)
NF  R_g
24
V_DS=4.5V
I_D=300µA
Ta=25˚C
20
f=100Hz
16
1kHz
12
10kHz
8
4
0
0.1 0.3 1 3 10 30 100
Signal source resistance R_g (kΩ)
NF  f
16
V_DS=4.5V
14
I_D=300µA
Ta=25˚C
12
10
8
R_g=10kΩ
6
4
2
1000kΩ
100kΩ
0
0.01 0.03 0.1 0.3 1 3 10
Frequency f (KHz)
2SK0065
I_D  V_GS
1.2
V_DS=4.5V
1.0
0.8
0.6
Ta=–25˚C
25˚C
0.4
75˚C
0.2
0
–2.0 –1.6 –1.2 – 0.8 – 0.4 0
Gate to source voltage V_GS (V)
NF  I_D
24
V_DS=4.5V
R_g=100kW
Ta=25˚C
20
16
f=100Hz
12
1kHz
8
10kHz
4
0
0
0.2 0.4 0.6 0.8 1.0
Drain current I_D (mA)
242