2SK0065 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Impedance Conversion In Low Frequency

Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
V_DSO
V_GDO
I_DSO
I_DGO
I_GSO
P_D
T_opr
T_stg
12
V
−12
V
2
mA
2
mA
2
mA
20
mW
−10 to +70
°C
−20 to +150
°C
0.45⁺_{–00..1200}
(2.5) (2.5)
123
0.45⁺_{–00..1200}
0.7±0.1
1: Drain
2: Gate
3: Source
NS-B1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current I_DSS*
V_DS = 4.5V, V_GS = 0, R_S = 2.2kΩ ± 1% 0.04
0.8
mA
Mutual conductance
g_m
V_DS = 4.5V, V_GS = 0
R_S = 2.2kΩ ± 1%, f = 1kHz
300
500
µS
Noise figure
V_DS = 4.5V, R_S = 2.2kΩ ± 1%
NV
C_G = 10pF, A-curve
4
µV
G_V1*
V_DS = 4.5V, R_S = 2.2kΩ ± 1%
C_G = 10pF, e_G = 100mV, f = 70Hz
−10
dB
Voltage gain
G_V2*
V_DS = 12V, R_S = 2.2kΩ ± 1%
−9.5
dB
C_G = 10pF, e_G = 100mV, f = 70Hz
G_V3*
V_DS = 1V, R_S = 2.2kΩ ± 1%
C_G = 10pF, e_G = 100mV, f = 70Hz
−11
dB
* _{IDSS rank classification and GV value}
Runk
P
Q
I_DSS (mA)
G_V1 (dB)
G_V2 (dB)
∆| G_V1 − G_V2 | (dB)
0.04 to 0.2
> −13
> −12
<3
0.15 to 0.8
> −12
> −11
<3
Note) The part number in the parenthesis shows conventional part number.
241