2SD2225 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
P_C — Ta
1.2
Printed circut board: Copper
foil area of 1cm² or more, and
1.0
the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
25˚C
1
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
C_ob — V_CB
80
I_E=0
70
f=1MHz
Ta=25˚C
60
50
40
30
20
10
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
200
Ta=25˚C
160
I_B=1.0mA
0.9mA
120
0.8mA
0.7mA
0.6mA
80
0.5mA
0.4mA
40
0.3mA
0.2mA
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
h_FE — I_C
600
I_C/I_B=10
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
0
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
2SD2225
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
f_T — I_E
400
V_CB=10V
Ta=25˚C
350
300
250
200
150
100
50
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
2