2SD2225 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD2225
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1473
s ^Features
q High collector to emitter voltage V_CEO of 120V.
q Optimum for low-frequency driver amplification.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
120
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CEO
V_EBO
h_FE1*1
h_FE2
h_FE3
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
min
I_C = 0.1mA, I_B = 0
120
I_E = 10µA, I_C = 0
5
V_CE = 10V, I_C = 150mA^*2
90
V_CE = 5V, I_C = 500mA^*2
50
V_CE = 5V, I_C = 100mA^*2
100
I_C = 300mA, I_B = 30mA^*2
I_C = 300mA, I_B = 30mA^*2
V_CB = 10V, I_E = –50mA, f = 200MHz^*2
V_CB = 10V, I_E = 0, f = 1MHz
typ max Unit
V
V
330
0.15
1
V
0.9
1.2
V
200
MHz
11.5
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
90 ~ 155 130 ~ 220
S
185 ~ 330
1