2SD2177 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

2SD2177
P_C  T_a
1.2
Copper plate at the collector
is more than 1 cm² in area,
1.7 mm in thickness
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
V_BE(sat)  I_C
100
IC / IB = 10
30
10
3
25°C
1
Ta = −25°C
100°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
C_ob  V_CB
60
I_E = 0
f = 1 MHz
Ta = 25°C
50
40
30
20
10
0
1
3
10
30
100
Collector to base voltage V_CB (V)
Transistors
I_C  V_CE
2.4
T_a = 25°C
2.0
1.6
I_B = 8 mA
1.2
7 mA
6 mA
0.8
5 mA
4 mA
3 mA
0.4
2 mA
1 mA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
h_FE  I_C
500
VCE = 2 V
400
300
Ta = 100°C
25°C
200
−25°C
100
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
V_CE(sat)  I_C
10
I_C / I_B = 20
3
1
0.3
T_a = 100°C
0.1
25°C
−25°C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
f_T  I_E
200
V_CB = 10 V
T_a = 25°C
160
120
80
40
0
−1
−3
−10
−30
−100
Emitter current I_E (mA)
2