2SD2177 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistors
2SD2177
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1434
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• Ccomplementary pair with 2SB1434
• Allowing supply with the radial taping
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage
V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
3
A
Collector current
I_C
2
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *: Printed circuit board: Copper foil area of 1 cm² or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45−0.05
2.5±0.5 2.5±0.5
1
2
3
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+−00..105}
(HW Type)
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
Base to emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1 ^*2
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = 20 V, I_E = 0
I_C = 10 µA, I_E = 0
50
I_C = 1 mA, I_B = 0
50
I_E = 10 µA, I_C = 0
5
V_CE = 2 V, I_C = 200 mA
120
V_CE = 2 V, I_C = 1 A
80
I_C = 1 A, I_B = 50 mA
I_C = 1 A, I_B = 50 mA
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
Note) _*1: Pulse measurement
*2: ^{Rank classification}
Rank
R
S
No-rank
h_FE1
120 to 240 170 to 340 120 to 340
Product of no-rank is not classified and have no indication for rank.
Typ Max
0.1
340
0.15 0.3
0.85 1.2
110
23 35
Unit
µA
V
V
V
V
V
MHz
pF
1