2SD2138 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
P_C — Ta
20
(1) T_C=Ta
(2) Without heat sink
(P_C=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_CE
6
T_C=25˚C
5
I_B=2mA _1.8mA
1.6mA
4
1.4mA
1.2mA
1.0mA
0.8mA
3
0.6mA
0.4mA
0.2mA
2
1
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SD2138, 2SD2138A
V_CE(sat) — I_C
100
I_C/I_B=250
30
10
3
1
T_C=–25˚C
25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
I_C — V_BE
6
V_CE=4V
25˚C
5
T_C=100˚C –25˚C
4
3
2
1
0
0
1
2
3
4
Base to emitter voltage V_BE (V)
h_FE — I_C
10⁵
V_CE=4V
T_C=100˚C
10⁴
25˚C
–25˚C
10³
10²
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
T_C=25˚C
30
10
I_CP
3
1 ^IC
0.3
0.1
t=1ms
DC
10ms
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
10000
1000
R_th(t) — t
Note: R_th was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
100
(1)
(2)
10
1
0.1
10^–4
10^–3
10^–2
10^–1
1
10
10²
10³
10⁴
Time t (s)
2