2SD2138 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1418 and 2SB1418A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Allowing supply with the radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2138
60
V_CBO
V
base voltage 2SD2138A
80
Collector to 2SD2138
60
emitter voltage 2SD2138A
V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
Unit: mm
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2138
current
2SD2138A
Collector cutoff
2SD2138
current
2SD2138A
Emitter cutoff current
Collector to emitter 2SD2138
voltage
2SD2138A
I_CBO
I_CEO
I_EBO
V_CEO
V_CE = 60V, I_E = 0
V_CE = 80V, I_E = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
h_FE1
h_FE2*
V_BE
V_CE(sat)
f_T
t_on
t_off
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 2A
V_CE = 4V, I_C = 2A
I_C = 2A, I_B = 8mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 2A, I_B1 = 8mA, I_B2 = –8mA,
V_CC = 50V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
E
min
60
80
1000
2000
typ max Unit
100
µA
100
100
µA
100
100
µA
V
10000
2.8
V
2.5
V
20
MHz
0.4
µs
4
µs
1