2SD2137 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
P_C — Ta
20
(1) T_C=Ta
(2) Without heat sink
(P_C=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_BE
6
V_CE=4V
5
4
3
T_C=100˚C
2
25˚C
1
–25˚C
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
1000
300
100
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
6
T_C=25˚C
5
I_B=100mA
90mA
80mA
4
70mA
60mA
50mA
3
40mA
30mA
2
20mA
10mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SD2137, 2SD2137A
V_CE(sat) — I_C
100
I_C/I_B=8
30
10
3
1
T_C=100˚C
0.3
25˚C
0.1
0.03
–25˚C
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
1000
300 ^TC=100˚C
25˚C
–25˚C
100
V_CE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=5V
f=10MHz
T_C=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=10 (I_B1=–I_B2)
V_CC=50V
10
T_C=25˚C
t_stg
3
1
t_on
0.3
t_f
0.1
0.03
0.01
0
1
2
3
4
Collector current I_C (A)
Area of safe operation (ASO)
100
Non repetitive pulse
T_C=25˚C
30
10
I_CP
3
I_C
1
0.3
10ms
DC
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2