2SD2137 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Allowing supply with the radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2137
60
base voltage 2SD2137A
V_CBO
80
V
Collector to 2SD2137
60
V_CEO
V
emitter voltage 2SD2137A
80
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
5
A
Collector current
I_C
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2137
current
2SD2137A
Collector cutoff
2SD2137
current
2SD2137A
Emitter cutoff current
Collector to emitter 2SD2137
voltage
2SD2137A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = 60V, V_BE = 0
V_CE = 80V, V_BE = 0
V_CE = 30V, I_B = 0
V_CE = 60V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 3A
V_CE = 4V, I_C = 3A
I_C = 3A, I_B = 0.375A
V_CE = 5V, I_C = 0.2A, f = 10MHz
I_C = 1A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 50V
Unit: mm
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
min
typ
max Unit
100
µA
100
100
µA
100
100
µA
60
V
80
70
250
10
1.8
V
1.2
V
30
MHz
0.3
µs
2.5
µs
0.2
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank h_FE = 70 to 250) in the rank classification.
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