2SD2136 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

2SD2136
P_C  T_a
2.0
Without heat sink
1.6
1.2
0.8
0.4
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
5
TC=25˚C
4
IB=100mA
90mA
80mA
3
70mA
60mA
50mA
40mA
2
30mA
20mA
1
10mA
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
I_C  V_BE
8
VCE=4V
25˚C
6
TC=100˚C –25˚C
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage V_BE (V)
V_CE(sat)  I_C
100
IC/IB=8
10
TC=100˚C
25˚C
1
–25˚C
0.1
0.01
0.01
0.1
1
10
Collector current I_C (A)
h_FE  I_C
10⁴
VCE=4V
10³
TC=100˚C
10²
–25˚C
25˚C
10
1
0.01
0.1
1
10
Collector current I_C (A)
f_T  I_C
300
VCB=10V
f=200MHz
TC=25˚C
250
200
150
100
50
0
0.01
0.1
1
10
Collector current I_C (A)
Safe operation area
100
Single pulse
TC=25˚C
10
ICP
IC
1
0.1
t=100ms
t=1s
t=10ms
0.01
0.1
1
10
100
Collector-emitter voltage V_CE (V)
R_th  t
10⁴
Without heat sink
10³
10²
10
1
10^−1
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
10⁴
Time t (s)
2
SJD00246BED