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2SD2136 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type
Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1416
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0
60
V
Base-emitter voltage *1
VBE VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff current (Emitter-base short) ICES VCE = 60 V, VBE = 0
200 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0
300 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
1
mA
Forward current transfer ratio
hFE1 *2 VCE = 4 V, IC = 1 A
40
250

hFE2 *1 VCE = 4 V, IC = 3 A
10
Collector-emitter saturation voltage *1 VCE(sat) IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE = 5 V, IE = − 0.1 A, f = 200 MHz
220
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
0.5
µs
Storage time
tstg
2.5
µs
Fall time
tf
0.4
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE1
40 to 90
70 to 150 120 to 250
Publication date: September 2003
SJD00246BED
1
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