2SD2000 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching)

Power Transistors
40
(1)
35
30
25
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P_C=2W)
20
15
(2)
10
(3)
5
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
T_C=–25˚C
0.3
25˚C
100˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
100
10
1
1 3 10 30 100 300 1000
Collector to base voltage V_CB (V)
I_C — V_CE
4
I_B=40mA ^TC=25˚C
35mA
3
30mA
25mA
20mA
2
15mA
10mA
1
5mA
0
012345678
Collector to emitter voltage V_CE (V)
2SD2000
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
0.1 _25˚C
0.03
T_C=100˚C
–25˚C
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
10⁴
V_CE=4V
10³
T_C=100˚C
10²
25˚C
–25˚C
1000
100
10
f_T — I_C
V_CE=12V
f=10MHz
T_C=25˚C
10
1
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
I_C/I_B=10 (I_B1=–I_B2)
V_CC=50V
10
T_C=25˚C
t_stg
1
t_on
0.1
t_f
0.01
012345678
Collector current I_C (A)
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation (ASO)
100
Non repetitive pulse
T_C=25˚C
30
10
I_CP
3
I_C
t=1ms
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2