2SD2000 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching)

Power Transistors
2SD2000
Silicon NPN triple diffusion planar type
For power switching
s ^Features
q High-speed switching
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector power dissipation P_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE(sat)
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CB = 80V, I_E = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 4A
V_CE = 4V, I_C = 4A
I_C = 4A, I_B = 0.4A
V_CE = 12V, I_C = 0.2A, f = 10MHz
I_C = 4A, I_B1 = 0.4A, I_B2 = – 0.4A,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
100
µA
100
µA
60
V
70
250
20
2.0
V
1.5
V
80
MHz
0.3
µs
1.0
µs
0.2
µs
1