2SD1995 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
P_C — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
1
3 10 30 100 300 1000
Collector current I_C (mA)
C_ob — V_CB
8
I_E=0
7
f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
160
Ta=25˚C
140
120
I_B=100µA
100
90µA
80µA
70µA
80
60µA
50µA
60
40µA
30µA
40
20µA
20
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1000
800
600
400
h_FE — I_C
Ta=75˚C
V_CE=10V
25˚C
–25˚C
200
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
NV — I_C
100 _VCE=10V
G_V=80dB
Function=FLAT
80 ^Ta=25˚C
R_g=100kΩ
60
22kΩ
40
5kΩ
20
0
1
3
10
30
100
Collector current I_C (mA)
2SD1995
I_C — V_BE
120
25˚C
100
Ta=75˚C –25˚C
V_CE=10V
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_E
250
V_CB=10V
Ta=25˚C
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
NV — V_CE
100
R_g=100kΩ
80
60
22kΩ
40
5kΩ
20
I_C=1mA
G_V=80dB
Function=FLAT
0
Ta=25˚C
1
3
10
30
100
Collector to emitter voltage V_CE (V)
2