2SD1995 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q High emitter to base voltage V_EBO.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
40
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
Noise voltage
NV
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
50
I_C = 1mA, I_B = 0
40
I_E = 10µA, I_C = 0
15
V_CE = 10V, I_C = 2mA
400
I_C = 10mA, I_B = 1mA
V_CB = 10V, I_E = –2mA, f = 200MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
100
nA
1
µA
V
V
V
2000
0.05
0.2
V
200
MHz
80
mV
*_{hFE Rank classification}
Rank
R
S
T
h_FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
1