2SD1992A Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

2SD1992A
Transistors
P_C  T_a
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
V_CE(sat)  I_C
100
IC / IB = 10
30
10
3
1
Ta = 75°C
0.3
25°C
−25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
I_C  V_CE
800
T_a = 25°C
700
I_B = 10 mA _{9 mA}
600
8 mA
7 mA
6 mA
500
5 mA
4 mA
400
3 mA
300
2 mA
200
1 mA
100
0
0 2 4 6 8 10 12 14 16 18 20
Collector to emitter voltage V_CE (V)
V_BE(sat)  I_C
100
IC / IB = 10
30
10
3
1 ^{Ta = 75°C}
0.3
25°C
−25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
f_T  I_E
240
V_CB = 10 V
T_a = 25°C
200
160
120
80
40
0
−1 −2 −3 −5 −10 −20−30 −50 −100
Emitter current I_E (mA)
C_ob  V_CB
12
I_E = 0
f = 1 MHz
10
Ta = 25°C
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage V_CB (V)
I_C  I_B
800
V_CE = 10 V
Ta = 25°C
700
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
Base current I_B (mA)
h_FE  I_C
300
VCE = 10 V
250
Ta = 75°C
200
25°C
150
−25°C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
V_CER  R_BE
120
IC = 2 mA
Ta = 25°C
100
80
60
40
20
0
1 3 10 30 100 300 1000
Base to emitter resistance R_BE (kΩ)
2