2SD1992A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistors
2SD1992A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1321A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings T_a = 25°C
0.45^{+−00..105}
2.5±0.5 2.5±0.5
1
2
3
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
60
V
V_CEO
50
V
V_EBO
7
V
I_CP
1
A
I_C
500
mA
P_C
600
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+−00..105}
(HW Type)
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1 ^*2
h_FE2 ^*1
V_CE(sat)
f_T
C_ob
V_CB = 20 V, I_E = 0
V_CE = 20 V, I_B = 0
I_C = 10 µA, I_E = 0
60
I_C = 2 mA, I_B = 0
50
I_E = 10 µA, I_C = 0
7
V_CE = 10 V, I_C = 10 mA
85
V_CE = 10 V, I_C = 500 mA
40
I_C = 300 mA, I_B = 30 mA
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
0.1
1
340
90
0.35 0.6
200
6
15
µA
µA
V
V
V
V
MHz
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
h_FE1
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
1