2SD1991A Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
P_C — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_BE
200
V_CE=10V
160
120
25˚C
Ta=75˚C –25˚C
80
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
h_FE — I_C
600
V_CE=10V
500
400
Ta=75˚C
25˚C
300
–25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
I_C — V_CE
60
Ta=25˚C
I_B=160µA
50
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SD1991A
1200
1000
I_B — V_BE
V_CE=10V
Ta=25˚C
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage V_BE (V)
I_C — I_B
240
V_CE=10V
Ta=25˚C
200
160
120
80
40
0
0 200 400 600 800 1000
Base current I_B (µA)
1000
800
h_FE — I_C
V_CE=5V
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
0.1
25˚C
Ta=75˚C
0.03
–25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
f_T — I_E
300
V_CB=10V
Ta=25˚C
240
600
180
Ta=125˚C
75˚C
400
120
25˚C
–25˚C
200
60
0
0.1
1
10
100
1000
Collector current I_C (mA)
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
2