2SD1991A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD1991A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1320A
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.45^{+–00..015}
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
1
µA
1
µA
60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE1*
h_FE2
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 2mA
V_CE = 2V, I_C = 100mA
50
V
7
V
160
460
90
Collector to emitter saturation voltage V_CE(sat)
I_C = 100mA, I_B = 10mA
0.1
0.3
V
Transition frequency
f_T
V_CB = 10V, I_E = –2mA, f = 200MHz
150
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
3.5
pF
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
160 ~ 260 210 ~ 340
S
290 ~ 460
1