2SC5912 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type

2SC5912
P_C  T_a
80
(1) TC = Ta
70
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
60
50
40
(1)
30
20
10
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature T_a (°C)
Safe operation area
100
ICP
10 _IC
Non repetitive pulse
TC = 25°C
t = 100 µs
t= t=
DC _{10 ms 1 ms}
1
10^−1
Safe operation area (Horizontal operation)
20
fH = 15.75 kHz, T_C < 90°C
A.S.O for a single
pulse load caused by
EHT flash over during
15
horizontal operation.
One action of the device must
not use in all areas.
(area A, B and C)
But it is able to use in two areas.
(area A and B or area B and C)
10
A
10^−2
10^−3
1
10
100
1 000
Collector-emitter voltage V_CE (V)
5
B
C
< 1 mA
0
0
500 1 000 1 500 2 000
Collector-emitter voltage V_CE (V)
2
SJD00308AED