2SC5912 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type

Power Transistors
2SC5912
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
■ Features
• High breakdown voltage: V_CBO ≥ 1 500 V
• Wide safe operation area
• Built-in dumper diode
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
1 500
V
Collector-emitter voltage (E-B short) V_CES
1 500
V
Emitter-base voltage (Collector open) V_EBO
7
V
Base current
I_B
3
A
Collector current
I_C
10
A
Peak collector current ^*
I_CP
15
A
Collector power dissipation
P_C
40
W
T_a = 25°C
3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 _{φ 3.2±0.1}
5˚
3.0±0.3
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) V_EBO I_E = 500 mA, I_C = 0
7
V
Forward voltage
V_F
I_F = 5 A
−2
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 1 000 V, I_E = 0
50
µA
V_CB = 1 500 V, I_E = 0
1
mA
Forward current transfer ratio
h_FE V_CE = 5 V, I_C = 5 A
5
10

Collector-emitter saturation voltage
V_CE(sat) I_C = 5 A, I_B = 1.25 A
2.5
V
Base-emitter saturation voltage
V_BE(sat) I_C = 5 A, I_B = 1.25 A
1.5
V
Transition frequency
f_T
V_CE = 10 V, I_C = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t_stg I_C = 5 A, Resistance loaded
5.0
µs
Fall time
t_f
I_B1 = 1.25 A, I_B2 = −2.5 A
0.5
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00308AED
1