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2SC5905 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type
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2SC5905
PC  Ta
3
Without heat sink
2
1
0
0
50
100
150
Ambient temperature Ta (°C)
IC  VCE
10 1.4 A
1.2 A
1.0 A
0.8 A
8 1.6 A
0.6 A
0.4 A
6
4
0.2 A
2
0
IB = 0 A
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
IC  VBE
12
8
4
Ta = 120°C
25°C
−40°C
0
0
0.4
0.8
1.2
Base-emitter voltage VBE (V)
VCE(sat)  IC
10
1
Ta = 120°C
10−1
25°C
−40°C
10−2
10−1
1
10
102
Collector current IC (A)
hFE  VCE
102
Ta = 120°C
25°C
10
−40°C
1
10−2
10−1
1
10
102
Collector-emitter voltage VCE (V)
1 000
800
tf  IB(END)
fH = 32 kHz
IC = 10 A
L load
600
400
200
0
0.4
0.8
1.2
1.6
Base current IB(END) (A)
tstg  IB(END)
2.0
fH = 32 kHz
IC = 10 A
L load
1.6
1.2
0.8
0.4
0
0.4
0.8
1.2
1.6
Base current IB(END) (A)
Area of safe operation
102
ICP = 30 A
PC = 70 W
10 IC = 20 A
10 ms
t = 100 µs
1 ms
DC operation
1
Area of safe operation (Horizontal operation)
fH = 32 kHz, TC < 90°C
ASO for a single
30
pulse load caused by
EHT flashover during
horizontal operation.
20
10−1
10−2
10−3
1
TC = 25°C
Single pulse
10
102
103
Collector-emitter voltage VCE (V)
10
< 1 mA
0
0
500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2
SJD00306BED
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