2SC5905 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type

Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
■ Features
• High breakdown voltage: V_CBO ≥ 1 700 V
• High-speed switching: t_f < 200 ns
• Wide safe operation area
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
1 700
V
Collector-emitter voltage (E-B short) V_CES
1 700
V
Collector-emitter voltage (Base open) V_CEO
600
V
Emitter-base voltage (Collector open) V_EBO
7
V
Base current
I_B
8
A
Collector current
I_C
20
A
Peak collector current ^*
I_CP
30
A
Collector power dissipation
P_C
70
W
T_a = 25°C
3.5
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 _{φ 3.2±0.1}
5˚
3.0±0.3
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
V_CB = 1 000 V, I_E = 0
V_CB = 1 700 V, I_E = 0
V_EB = 7 V, I_C = 0
V_CE = 5 V, I_C = 10 A
I_C = 10 A, I_B = 2.5 A
I_C = 10 A, I_B = 2.5 A
V_CE = 10 V, I_C = 0.1 A, f = 0.5 MHz
I_C = 10 A, Resistance loaded
I_B1 = 2.5 A, I_B2 = −5.0 A
50
µA
1
mA
50
µA
5
12

3
V
1.5
V
3
MHz
3.0
µs
0.2
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2004
SJD00306BED
1