2SC5363 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)

Transistor
P_C — Ta
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
10
I_C/I_B=10
3
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
| S_21e |² — I_C
12
V_CE=0.3V
f=900MHz
10
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
I_C — V_CE
60
Ta=25˚C
50
40
I_B=600µA
500µA
30
400µA
20
300µA
200µA
10
100µA
0
0123456
Collector to emitter voltage V_CE (V)
2SC5363
I_C — V_BE
30
V_CE=3V
25
25˚C
20
Ta=75˚C
–25˚C
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage V_BE (V)
h_FE — I_C
120
V_CE=3V
100
Ta=75˚C
80
25˚C
60
–25˚C
40
20
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
NF — I_C
4.8
V_CE=0.3V
f=900MHz
4.0
3.2
2.4
1.6
0.8
0
0.1
0.3
1
3
10
Collector current I_C (mA)
1000
300
100
f_T — I_C
V_CE=3V
f=1.5GHz
30
10
3
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
1.2
I_E=0
f=1MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
2