2SC5363 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)

Transistor
2SC5363(Tentative)
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
9
V
Collector to emitter voltage V_CEO
6
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
30
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 3Y
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
Symbol
I_CBO
I_EBO
h_FE
C_ob
f_T
| S_21e |²
NF
Conditions
V_CB = 5V, I_E = 0
V_EB = 1V, I_C = 0
V_CE = 3V, I_C = 10mA
V_CB = 3V, I_E = 0, f = 1MHz
V_CE = 3V, I_C = 10mA, f = 1.5GHz
V_CE = 0.3V, I_C = 1mA, f = 0.9GHz
V_CE = 0.3V, I_C = 1mA, f = 0.9GHz
min
typ
max Unit
1
µA
1
µA
40
100 200
0.4
0.7
pF
10
GHz
6.5
dB
1.7
dB
1