2SC4212 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

2SC4212
Power Transistors
P_C  T_a
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
3
(1)
2
1
(2)
0
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature T_a (˚C)
I_C  V_CE
200
TC=25˚C
160
IB=2.0mA _1.8mA
1.6mA
120
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
80
0.4mA
40
0.2mA
0
0
4
8
12 16 20
Collector to emitter voltage V_CE (V)
I_C  V_BE
240
25˚C
VCE=10V
TC=75˚C
–25˚C
200
160
120
80
40
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
V_CE(sat)  I_C
10
IC/IB=10
3
1
25˚C
0.3
TC=100˚C
–25˚C
0.1
0.03
0.01
1
3
10
30
100
Collector current I_C (mA)
1000
300
100
h_FE  I_C
VCE=10V
TC=100˚C
25˚C
–25˚C
30
10
3
1
1
3
10
30
100
Collector current I_C (mA)
f_T  I_E
200
VCB=30V
f=200MHz
TC=25˚C
160
120
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Emitter current I_E (A)
C_ob  V_CB
20
IE=0
f=1MHz
TC=25˚C
16
12
8
4
0
1
3
10
30
100
Collector to base voltage V_CB (V)
Area of safe operation (ASO)
10
Single pulse
TC=25˚C
3
1
ICP
0.3
IC
0.1
0.03
t=10ms
t=1s
DC
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2