2SC4212 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC4212
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
I Features
• High collector to emitter voltage V_CEO
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
8.0^{+–00..15}
φ 3.16±0.1
Unit: mm
3.2±0.2
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
350
V
Collector to emitter voltage
V_CEO
300
V
Emitter to base voltage
V_EBO
7.5
V
Peak collector current
I_CP
400
mA
Collector current
I_C
200
mA
Collector power dissipation
P_C
1.2 ^*1
W
5 ^*2
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*1: Without heat sink
*2: ^{With a 100 × 100 × 2 mm A1 heat sink}
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
C_ob
V_CB = 200 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 100 µA, I_E = 0
350
I_C = 5 mA, I_B = 0
300
I_E = 100 µA, I_C = 0
7.5
V_CE = 10 V, I_C = 10 mA
40
I_C = 50 mA, I_B = 5 mA
V_CB = 30 V, I_E = −10 mA, f = 200 MHz 50
V_CB = 50 V, I_E = 0, f = 1 MHz
Typ Max
2
2
250
1
4.5
Unit
µA
µA
V
V
V
V
MHz
pF
1