2SC4208 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

Transistor
P_C — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
f_T — I_E
240
V_CB=10V
Ta=25˚C
200
160
120
80
40
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
I_C — V_CE
800
Ta=25˚C
700
IB=10mA
9mA
600
8mA
7mA
6mA
500
5mA
4mA
400
3mA
300
2mA
200
1mA
100
0
0
4
8
12 16 20
Collector to emitter voltage V_CE (V)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
25˚C _Ta=75˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
C_ob — V_CB
12
I_E=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
2SC4208, 2SC4208A
I_C — I_B
800
V_CE=10V
Ta=25˚C
700
600
500
400
300
200
100
0
0
2
4
6
8
10
Base current I_B (mA)
h_FE — I_C
300
V_CE=10V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
V_CER — R_BE
120
I_C=2mA
Ta=25˚C
100
80
60
2SA4208A
40
2SA4208
20
0
1 3 10 30 100 300 1000
Base to emitter resistance R_BE (kΩ)
2